www.goodark.com page 1 of 7 rev.2.2 BSS138 50v n-channel mosfet package marking and ordering information device marking device device package reel size tape width quantity s138 BSS138 sot-23 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 50 v gate-source voltage v gs 20 v i d 0.22 i d (7 0) 0.18 a drain current-continuous@ current-pulsed (note 1) i dm 0.88 a maximum power dissipation p d 0.43 w operating junction and storage temperature range t j ,t stg -55 to 175 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 350 /w electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics general features v ds = 50v,i d = 0.22a r ds(on) < 6 @ v gs =4.5v r ds(on) < 3.5 @ v gs =10v esd rating 1000v hbm high power and current handing capability lead free product surface mount package schematic d iagram marking and p in assignment sot - 23 t op v iew application s direct logic-level interface: ttl/cmos drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. battery operated systems solid-state relays
www.goodark.com page 2 of 7 rev.2.2 BSS138 50v n-channel mosfet drain-source breakdown voltage bv dss v gs =0v i d =250a 50 v zero gate voltage drain current i dss v ds =50v,v gs =0v 1 a gate-body leakage current i gss v gs =20v,v ds =0v 10 ua gate-source breakdown voltage bv gso v ds =0v, i g =250ua 20 v on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =1ma 0.8 1.5 v v gs =10v, i d =0.22a 3.5 drain-source on-state resistance r ds(on) v gs =4.5v, i d =0.22a 6 forward transconductance g fs v ds =10v,i d =0.22a 0.1 s dynamic characteristics (note4) input capacitance c lss 30 output capacitance c oss 15 reverse transfer capacitance c rss v ds =25v,v gs =0v, f=1.0mhz 6 pf switching characteristics (note 4) turn-on delay time t d(on) 2.6 turnCon rise time t r 9 turn-off delay time t d(off) 20 turnCoff fall time t f v dd =30v,v gs =10v, r gen =6 i d =0.22a 6 ns total gate charge q g 1.7 2.4 gateCsource charge q gs 0.1 gateCdrain charge q gd v ds =25v,i d =0.22a,v gs =10v 0.4 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =0.44a 1.4 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
www.goodark.com page 3 of 7 rev.2.2 BSS138 50v n-channel mosfet typical electrical and thermal characteristics vgs rgen vin g vdd rl vout s d figure 1:switching test circuit v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2:switching waveforms figure 3 power dissipation t j -junction temperature( ) p d power(w) figure 4 drain current i d - drain current (a t j -junction temperature( ) i d - drain current (a) vds drain - source voltage (v) figure 5 output characteristics figure 6 drain-source on-resistance rdson on-resistance( ) i d - drain current (a)
www.goodark.com page 4 of 7 rev.2.2 BSS138 50v n-channel mosfet figure 8 drain - source on - resistance normalized on-resistance t j -junction temperature( ) vgs gate-source voltage (v) i d - drain current (a) figure 7 transfer characteristics figure 9 rdson vs vgs rdson on-resistance( ) vgs gate-source voltage (v) vgs gate-source voltage (v) qg gate charge (nc) figure 11 gate charge c capacitance (pf) figure 10 capacitance vs vds vds drain-source voltage (v) figure 12 source - drain diode forward i s - reverse drain current (a) vsd source-drain voltage (v)
www.goodark.com page 5 of 7 rev.2.2 BSS138 50v n-channel mosfet r(t),normalized effective transient thermal impedance figure 14 normalized maximum transient thermal impedance square wave pluse duration(sec) figure 13 safe operation area i d - drain current (a) vds drain-source voltage (v)
www.goodark.com page 6 of 7 rev.2.2 BSS138 50v n-channel mosfet sot-23 package information dimensions in millimeters (unit: mm) notes 1. all dimensions are in millimeters. 2. tolerance 0.10mm (4 mil) unless otherwise specified 3. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 4. dimension l is measured in gauge plane. 5. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. dimensions in millimeters symbol min. max. a 0.900 1.150 a1 0.000 0.100 a2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 d 2.800 3.000 e 1.200 1.400 e1 2.250 2.550 e 0.950typ e1 1.800 2.000 l 0.550ref l1 0.300 0.500 0 8
www.goodark.com page 7 of 7 rev.2.2 BSS138 50v n-channel mosfet sot 23 tape and reel information dimensions in millimeters (unit: mm) notes 1. all dimensions are in millimeters. 2. 10 sprocket hole pitch cumulative tolerance 0.20max 3. general tolerance 0.25
|
